A new infrared photodiode, developed using Germanium, offers a 35% increase in responsivity at a 1.55 µm wavelength, which is widely used in telecommunications. Unlike traditional Indium Gallium Arsenide sensors, this Germanium-based photodiode achieves exceptional performance in infrared light detection, making it a promising solution for various applications, including self-driving vehicles, virtual reality, and telecommunications.

This breakthrough is made possible through advanced manufacturing techniques that reduce both optical and electrical losses. The innovation stands out due to its high responsivity, which allows it to capture nearly all infrared light. The design is compatible with existing semiconductor production methods, ensuring it can be easily integrated into current systems. Researchers believe that this photodiode will significantly impact industries relying on infrared sensors and could lead to new advancements in technology.